Subject description - XP34APD
Summary of Study |
Summary of Branches |
All Subject Groups |
All Subjects |
List of Roles |
Explanatory Notes
Instructions
| XP34APD | Advanced Power Semiconductor Devices and ICs | ||
|---|---|---|---|
| Roles: | S | Extent of teaching: | 2P+2C |
| Department: | 13134 | Language of teaching: | CS |
| Guarantors: | Vobecký J. | Completion: | ZK |
| Lecturers: | Vobecký J. | Credits: | 4 |
| Tutors: | Vobecký J. | Semester: | Z,L |
Web page:
https://moodle.fel.cvut.cz/course/view.php?id=3730Anotation:
Physical and technological structures. Development trends. Parameters and applications. Bipolar structures. MOS structures. BiMOS structures. PN diodes. Schottky diodes. Bipolar transistors. MOS and IGBT transistors. Thyristors (including GTO and MCT). Secondary breakdown, mechanism, safe area. Smart-power devices. High voltage ICs, operation, principles, applicationsCourse outlines:
| 1. | Physical and technological structures | |
| 2. | Development trends | |
| 3. | Parameters and applications | |
| 4. | Bipolar structures | |
| 5. | MOS structures | |
| 6. | BiMOS structures | |
| 7. | PN diodes | |
| 8. | Schottky diodes | |
| 9. | Bipolar transistors | |
| 10. | MOS and IGBT transistors | |
| 11. | Thyristors (including GTO and GCT) | |
| 12. | Secondary breakdown, mechanism, SOA | |
| 13. | Smart-power devices | |
| 14. | High voltage ICs, operation, principles, applications |
Exercises outline:
nLiterature:
| B. | J. Baliga, Power Semiconductor Devices, PWS Publishing Company, 2000 |
Requirements:
- Subject is included into these academic programs:| Program | Branch | Role | Recommended semester |
| DOKP | Common courses | S | – |
| DOKK | Common courses | S | – |
| Page updated 20.1.2025 05:51:30, semester: Z,L/2024-5, Z/2025-6, Send comments about the content to the Administrators of the Academic Programs | Proposal and Realization: I. Halaška (K336), J. Novák (K336) |