Subject description - XP34APD

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XP34APD Advanced Power Semiconductor Devices and ICs
Roles:S Extent of teaching:2P+2C
Department:13134 Language of teaching:CS
Guarantors:Vobecký J. Completion:ZK
Lecturers:Vobecký J. Credits:4
Tutors:Vobecký J. Semester:Z,L

Web page:

https://moodle.fel.cvut.cz/course/view.php?id=3730

Anotation:

Physical and technological structures. Development trends. Parameters and applications. Bipolar structures. MOS structures. BiMOS structures. PN diodes. Schottky diodes. Bipolar transistors. MOS and IGBT transistors. Thyristors (including GTO and MCT). Secondary breakdown, mechanism, safe area. Smart-power devices. High voltage ICs, operation, principles, applications

Course outlines:

1. Physical and technological structures
2. Development trends
3. Parameters and applications
4. Bipolar structures
5. MOS structures
6. BiMOS structures
7. PN diodes
8. Schottky diodes
9. Bipolar transistors
10. MOS and IGBT transistors
11. Thyristors (including GTO and GCT)
12. Secondary breakdown, mechanism, SOA
13. Smart-power devices
14. High voltage ICs, operation, principles, applications

Exercises outline:

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Literature:

B. J. Baliga, Power Semiconductor Devices, PWS Publishing Company, 2000

Requirements:

-

Subject is included into these academic programs:

Program Branch Role Recommended semester
DOKP Common courses S
DOKK Common courses S


Page updated 16.6.2024 17:52:04, semester: Z,L/2023-4, Z/2024-5, Send comments about the content to the Administrators of the Academic Programs Proposal and Realization: I. Halaška (K336), J. Novák (K336)