Summary of Study |
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Explanatory Notes
Instructions
| QB-EPV |
Semiconductor Electronics |
| Roles: | |
Extent of teaching: | 2P+2C |
| Department: | 13134 |
Language of teaching: | CS |
| Guarantors: | |
Completion: | Z,ZK |
| Lecturers: | |
Credits: | 4 |
| Tutors: | |
Semester: | L |
Anotation:
Electronic properties of semiconductors determined by their
crystal structure. Transport and statistics of electrons
and holes in equilibrium and non-equilibrium. Properties of
basic semiconductor structures (PN junction, heterojunction
based on band structure analysis. Systematic derivation of
semiconductor devices characteristics (diode, BJT, MOSFET,
JFET, laser) with special emphasis on non-ideal effects and
extracted circuit models. Essential trends of progress
Course outlines:
| 1. | | Crystal structure of semiconductors, crystal defects, |
phonons.
| 2. | | Semiconductor band structure, electron and hole |
effective mass, density of states.
| 3. | | Semiconductor in thermodynamic equilibrium, Fermi level. |
| 4. | | Carrier transport in semiconductors, electron and hole |
mobility.
| 5. | | Electrons and holes in nonequilibrium. Generation and |
recombination.
| 6. | | PN junction, heterojunctions - two dimensional electron |
gas, superlattices.
| 7. | | Semiconductor diodes, breakdown mechanisms, resonant |
tunnelling.
| 8. | | Bipolar junction transistor, calculation of current |
amplification, HBT, nonideal effects.
| 9. | | Metal - semiconductor junction, modulation doping, JFET, |
MESFET, HEMT.
| 10. | | MOS, ideal and real structure, dielectrics, MOS |
structure capacitance.
| 11. | | MOSFET, nonideal effects, short a narrow channel |
effects, CCD.
| 12. | | Interaction of radiation with semiconductor, optical |
absorption, photoluminescence.
| 13. | | Electroluminescence. Semiconductor lasers. |
| 14. | | Quantum dots, single electron transport. |
Exercises outline:
| 1. | | Basics of quantum mechanics - repetition. |
| 2. | | Electron in the periodic potential, Kroning-Penney model |
| 3. | | Fermi-Dirac and Bose-Einstein statistics - derivation. |
| 4. | | Boltzmann transport equation, HD, DD models - derivation |
| 5. | | Simulation by Monte Carlo method - demonstration. |
| 6. | | Semiconductor processing - excursion. |
| 7. | | Electron in the quantum well, tunnelling - Schrodinger |
equation application.
| 8. | | Model levels of semiconductor devices. |
| 9. | | Showing of physical effects in semiconductors by |
computer 2D simulation.
| 10. | | Measurement of transport properties - HEMT channel |
mobility.
| 11. | | Measurement on the unipolar structure - CV |
characteristics.
| 12. | | Measurement on the semiconductor laser - spectral |
characteristics.
| 13. | | Final written test |
| 14. | | Final grading |
Literature:
| 1. | | D. A. Naemen: Semiconductor Physics and Devices: Basic |
Principles, R. D. Irwin 1992
| 2. | | M. J. Kelly: Low-Dimensional Semiconductors, Oxford |
Press 1995
| 3. | | U. Cilingiroglu: Systematic Analysis of Bipolar and MOS |
Transistors, Artech House 1993
Requirements:
Presence in labs and seminars, successful final test.
Subject is included into these academic programs:
| Program |
Branch |
Role |
Recommended semester |
| Page updated 22.4.2025 15:54:29, semester: L/2024-5, Z/2025-6, Z,L/2026-7, L/2025-6, Z/2024-5, Send comments about the content to the Administrators of the Academic Programs |
Proposal and Realization: I. Halaška (K336), J. Novák (K336) |