Subject description - AD0M13MKV
Summary of Study |
Summary of Branches |
All Subject Groups |
All Subjects |
List of Roles |
Explanatory Notes
Instructions
Web page:
http://ocw.cvut.cz/moodle/course/enrol.php?id=292
Anotation:
Power semiconductor device (diodes, BJTs, thyristors, MOSFETs and IGBTs) and integraed structures (modules). Structures, function, characteristics and parameters, conditions for reliable operation. Connection of devices in parallel and in series. Operating reliability of power components and equipments.
Study targets:
To give students detail knowledge about structure, functions and basic parameters of power semiconductor devices
Course outlines:
| 1. | | Introduction. Physics of basic structures |
| 2. | | Materials for power devices (Si, SiC, GaN) |
| 3. | | Power diodes (static and dynamic characteristics) |
| 4. | | Schottky diodes and combined structures |
| 5. | | Power transistors and thyristors |
| 6. | | Modern thyristor type devices (GTO, IGCT, LTT) |
| 7. | | Power MOSFETs (VDMOS, TMOS, SJMOS) |
| 8. | | IGBTs. PT and NPT structures. |
| 9. | | Devices for high frequency operation (LD MOS, HJT) |
| 10. | | Power integration (PIC, IPM) |
| 11. | | The cooling of power device. |
| 12. | | Device encapsulations and heat sinks |
| 13. | | Device connection in series and in parallel |
| 14. | | Operating reliability of power devices and components |
Exercises outline:
| 1. | | Introduction |
| 2. | | The first group of laboratory tasks - theory and ezpalation |
| 3. | | The sekond group of laboratory tasks - theory and explanation |
| 4. | | The third group of laboratory tasks - theory and explanation |
| 5. | | Measuring of temperature dependence of reverse characteristics of thyristors and diodes |
| 6. | | Measuring of temperature dependence of forward characteristics of thyristors and diodes |
| 7. | | Measuring of dynamic paprameters during diode reverse recovery process |
| 8. | | Measuring of static characteristics of BJT, MOSFET a IGBT in dependence on temperature |
| 9. | | Measuring og dynamec parameters of semiconductor switches |
| 10. | | Meausring of the trajectory of the operating point during device switching |
| 11. | | Measuring of pasive devioce parametrs |
| 12. | | Measuring of transient thermal impedance |
| 13. | | Materiále and construction of components - exhibition |
| 14. | | Closing |
Literature:
| 1. | | Benda, V., Gowar, J., Grant, G. A. Power Semiconductor Devices. |
Chichester: J.Wiley & Sons. 1999
| 2. | | Baliga, J. Power Semiconductor Devices. Boston: PWS Publishing |
Company.1995
Requirements:
A student has to obtain a credit before an examination
Subject is included into these academic programs:
| Program |
Branch |
Role |
Recommended semester |
| Page updated 13.10.2024 09:51:04, semester: L/2023-4, Z/2025-6, Z,L/2024-5, Send comments about the content to the Administrators of the Academic Programs |
Proposal and Realization: I. Halaška (K336), J. Novák (K336) |